$40.00

Medios de pago

    Phase Change Memory

    Editorial: Morgan & Claypool Publishers

    Idioma: Inglés

    ISBN: 9781608456666

    Formatos: PDF (con DRM de Adobe)

    Compatibles con: Windows, Mac, iOS, Android & eReaders

    $40.00

    Medios de pago

      $40.00

      Medios de pago

        Phase Change Memory

        Editorial: Morgan & Claypool Publishers

        Idioma: Inglés

        ISBN: 9781608456666

        Formatos: PDF (con DRM de Adobe)

        Compatibles con: Windows, Mac, iOS, Android & eReaders

        $40.00

        Medios de pago
          Sinopsis
          As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs.Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories
          Acerca de Moinuddin K. Qureshi

          Georgia Institute of Technology

          Acerca de Sudhanva Gurumurthi

          University of Virginia

          Acerca de Bipin Rajendran

          IBM Research

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